Current increases at the ohmic contact due to *

forward biased

metal -semiconductor contact

impur

Question

Current increases at the ohmic contact due to *

forward biased

metal -semiconductor contact

impurity concentration is high

no potential barrierBand gap of an intrinsic semiconductor *
2KTlogR
2K (log R)/T
2K log R
(1/2K)(log R)/ 1/T​

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Raelynn 3 months 2021-07-31T14:24:42+00:00 1 Answers 0 views 0

Answers ( )

    0
    2021-07-31T14:26:39+00:00

    Answer:

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