Current increases at the ohmic contact due to *

forward biased

metal -semiconductor contact

impur

Current increases at the ohmic contact due to *

forward biased

metal -semiconductor contact

impurity concentration is high

no potential barrierBand gap of an intrinsic semiconductor *
2KTlogR
2K (log R)/T
2K log R
(1/2K)(log R)/ 1/T​

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